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DISCRETE SEMICONDUCTORS
DATA SHEET
BF1107; BF1107W N-channel single gate MOS-FETs
Product specification Supersedes data of 1998 Jun 22 1999 May 14
Philips Semiconductors
Product specification
N-channel single gate MOS-FETs
FEATURES * Currentless RF switch. APPLICATIONS * Various RF switching applications such as: - Passive loop through for VCR tuner - Transceiver switching. DESCRIPTION The BF1107 and BF1107W are depletion type field-effect transistors in SOT23 and SOT323 packages respectively. The low loss and high isolation capabilities of this MOS-FET provide excellent RF switching functions. Integrated diodes between gate and source and between gate and drain protect against excessive input voltage surges. Drain and source are interchangeable. PINNING DESCRIPTION PIN BF1107 1 2 3 drain source gate drain source gate BF1107W
Marking code: W3. Marking code: S3p. 1
handbook, halfpage
BF1107; BF1107W
3
2
MSB003
Top view
Fig.1 Simplified outline SOT23 (BF1107).
handbook, halfpage
3
3 1 2
1 Top view 2
MAM062
Fig.2 Simplified outline SOT323 (BF1107W).
QUICK REFERENCE DATA SYMBOL S21(on)2 S21(off)2 RDSon VGSoff PARAMETER losses (on-state) isolation (off-state) drain-source on-resistance pinch-off voltage VGS = 0; ID = 1 mA ID = 20 A; VDS = 1 V CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. CONDITIONS RS = RL = 50 ; f = 50 to 860 MHz MIN. - 30 - - TYP. - - 12 -3 MAX. 2.5 - 20 -4.5 UNIT dB dB V
1999 May 14
2
Philips Semiconductors
Product specification
N-channel single gate MOS-FETs
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VSD VDG VSG ID Tstg Tj drain-source voltage source-drain voltage drain-gate voltage source-gate voltage drain current storage temperature junction temperature PARAMETER
BF1107; BF1107W
MIN. - - - - - -65 - 3 3 7 7
MAX. V V V V
UNIT
10 +150 150
mA C C
THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Soldering point of the gate lead. STATIC CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)GSS VGSoff IDSX IGSS PARAMETER gate-source breakdown voltage gate-source pinch-off voltage drain-source leakage current gate cut-off current CONDITIONS VDS = 0; IGS = 0.1 mA VDS = 1 V; ID = 20 A VGS = -5 V; VDS = 2 V VGS = -5 V; VDS = 0 MIN. 7 - - - TYP. - -3 - - MAX. - -4.5 10 100 UNIT V V A nA PARAMETER thermal resistance from junction to soldering point; note 1 VALUE 260 UNIT K/W
DYNAMIC CHARACTERISTICS Common gate; Tamb = 25C. SYMBOL S21(on)2 PARAMETER losses (on-state) CONDITIONS VSG = VDG = 0; RS = RL = 50 ; f = 50 to 860 MHz VSG = VDG = 0; RS = RL = 75 ; f = 50 to 860 MHz S21(off)2 isolation (off-state) VSG = VDG = 5 V; RS = RL = 50 ; f = 50 to 860 MHz VSG = VDG = 5 V; RS = RL = 75 ; f = 50 to 860 MHz RDSon Cig Cog drain-source on-resistance input capacitance output capacitance VGS = 0; ID = 1 mA VSG = VDG = 5 V; f = 1 MHz VSG = VDG = 0; f = 1 MHz VSG = VDG = 5 V; f = 1 MHz VSG = VDG = 0; f = 1 MHz 1999 May 14 3 MIN. - - 30 30 - - - - - TYP. - - - - 12 0.9 1.5 0.9 1.5 MAX. 2.5 3.5 - - 20 - 2 - 2 UNIT dB dB dB dB pF pF pF pF
Philips Semiconductors
Product specification
N-channel single gate MOS-FETs
BF1107; BF1107W
handbook, halfpage 2 S
0
MBK831
21(on) (dB) -1
handbook, halfpage 2 S
(2)
0
MBK832
21(off) (dB)
(1)
-20 -2
-3 -40
(2)
-4
(1)
-5 10
102
f (MHz)
103
-60 10
102
f (MHz)
103
VSG = VDG = 0. (1) RS = RL = 50 . (2) RS = RL = 75 .
VSG = VDG = 5 V. (1) RS = RL = 50 . (2) RS = RL = 75 .
Fig.3
Losses (on-state) as a function of frequency; typical values.
Fig.4
Isolation (off-state) as a function of frequency; typical values.
handbook, halfpage RL
0
MBK833
(dB) -5
-10
-15
(1)
-20
(2)
-25 10
102
f (MHz)
103
VSG = VDG = 0. (1) RS = RL = 50 . (2) RS = RL = 75 .
Fig.5
Input and output return losses (on-state) as function of frequency; typical values.
1999 May 14
4
Philips Semiconductors
Product specification
N-channel single gate MOS-FETs
PACKAGE OUTLINES Plastic surface mounted package; 3 leads
BF1107; BF1107W
SOT23
D
B
E
A
X
HE
vMA
3
Q A A1
1
e1 e bp
2
wMB detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1
OUTLINE VERSION SOT23
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
1999 May 14
5
Philips Semiconductors
Product specification
N-channel single gate MOS-FETs
BF1107; BF1107W
Plastic surface mounted package; 3 leads
SOT323
D
B
E
A
X
y
HE
vMA
3
Q
A
A1 c
1
e1 e bp
2
wM B Lp detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2
OUTLINE VERSION SOT323
REFERENCES IEC JEDEC EIAJ SC-70
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
1999 May 14
6
Philips Semiconductors
Product specification
N-channel single gate MOS-FETs
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
BF1107; BF1107W
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1999 May 14
7
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1999
Internet: http://www.semiconductors.philips.com
SCA 64
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125004/00/03/pp8
Date of release: 1999 May 14
Document order number:
9397 750 05776

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